Gutsul I. Electric and heat transfer effects in anisotropic semiconductors

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0501U000123

Thesis Registration Form

0501U000123.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-03-2001

Specialized Academic Board

Д76.051.01

Essay

The kinetic equation for the p-Ge-type semiconductors was solved taking into consideration the real structure of energy spectrum and anisotropy of scattering mechanisms at the presence of electric and magnetic fields and temperature gradient. The temperature and field dependences of kinetic factors are investigated. Parameters of anisotropic optical thermoelement are analized at one- and two-dimensional temperature distribution taking into account the optical absorbtion and anisotropy of thermo-EMF and thermal conductivity coefficients.

Read more

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures