Skryshevs'kyj V. . GENERATION- RECOMBINATION PROCESSES IN THE HETEROSTRUCTURES WITH THIN LAYERS OF POROUS SILICON AND SILICON OXIDE.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0501U000338

Thesis Registration Form

0501U000338.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

15-10-2001

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

Silicon heterostructures with porous silicon layers. To elaborate the working physical principles of chemical sensors and solar cells. The methods are the experimental study of surface, electro-physical properties, analytical calculation and numerical simulation. The mechanisms of electron transport in the contacts with porous silicon layers are studied, the parameters of localized states and recombination characteristics of anodic porous silicon layers are established. The efficient hydrogen sensors, solar cells with selective diffusors, photodetectors are created. The field of application is the semiconductor microelectronics and optoelectronics.

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