Bogoboyashchyy V. Formation of acceptor band by point defects and dopes in narrow-gap p-Hg1-xCdxTe crystals

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0502U000157

Thesis Registration Form

0502U000157.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

19-04-2002

Specialized Academic Board

Д26.199.02

Essay

Results of researches of properties of narrow-gap p-Hg1-xCdxTe crystals and epitaxial structures due to active native defects and impurities are represented in the thesis. Parameters of band structure are coordinated, and it is shown, that the heavy hole band is essentially not parabolic at low hole energies. A precision optical method for measurements of electron and hole concentration at room temperature is elaborated. The constants of equilibrium of native defects and mechanisms of its interaction at low temperatures are determined. Electrical and physical, photoelectrical properties of the doped n- and p-type crystals at 77 K, peculiarities of hopping and metallic conduction, and structure and characteristics of the acceptor band of p-Hg1-xCdxTe are investigated. Mutual influence of a substrate and epitaxial film of Hg1-xCdxTe is studied. New application for variable-gap Hg1-xCdxTe structures is offered.

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Files

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