Novosyadlyj S. Рhysical - technological peculiarities of the submicron structures VLSI forming.

In a thesis the outcomes of researches of technological processes and instrument structures of the large integrated circuits are represented and on their basis the base principles of a highly effective system process of a high level engineering are developed: modularity of technological pure zones with ionization of laminar air streams for a support of high cleanness with neutralizing of electrostatic charges and individual processing of Si-wafers; automated designing of flawless topology of chips of the large-scale integrated circuits by CAE tools; computer process engineerings with using of mathematical simulation, verification, automatic generation of a test sequence and control of design and technological limitations of instrument structures; controlability by the technological path of manufacture of structures of chips because of microcycles and microcommands of the computer system of handle of a system process engineering for want of continuous chips production process; low defect level for wantof creation of functional layers of structures of chips with use of a hetter process engineering and low temperature processes of films deposition; electrophysical computer diagnosing for reliability prediction of chips of the large-scale integrated circuit on a level of nonlinearity of the characteristics of instrument structures and dispersion of electrophysical parameters of test structures (TS) generated according to the technological path of the large-scale integrated circuits manufacture; corrosion resistance of bonding and multilevel distributing of topology of the large-scale integrated circuits, radiation stability of the gate system and Si-SiO2 boundary; precision of multicharge ion implantation processes, projectional lithography and dry etching of functional stratums with use of high contrast photoresist; a conformality of low temperature processes of a sedimentation of functional stratums and anisotrophycal etching for want of creation of structures; analyticity of physical and chemical quantitative and qualitative analyses during creation of functional stratums; precision of electrical parameters of the large-scale integrated circuits at the expense of radiation preliminary adjustment of threshold votagees of MOS transistors with multicharge ion implantation process and -radiation; mathematical simulation of technological processes for definition of design rules of instrument structures for want of full identification of units models of an actual physical structure. Key words: a functional layer, test structure, interphase boundary of the unit, isoconcetrated impurity, multicharge ion implantation, hetter process neering, electrophysical diagnosing, polyimid isolation.