Evtukh A. The tunnel injection and emission of electrons in layered semiconductor structures on silicon.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0504U000167

Thesis Registration Form

0504U000167.pdf

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Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-03-2004

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

. The processes of electron tunnel injection into solid state and tunnel emission into vacuum in layered structures on silicon have been investigated. The main objective regularities of electron tunnel transport through ultrathin films of silicon dioxide, diamond-like carbon films, layered structures with delta-doped and nanocomposite films have been established. The significant influence of built-in charge into silicon dioxide, type and level of diamond-like carbon films doping and content of sp3 bonds, existence of structures with delta-doped and nanocomposite films on peculiarities of energy band structure and tunnel transport of electrons was revealed. The perspectives of such layered structures application in devices of submicron micro- and nanoelectronics, as solid state and vacuum have been shown.

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