Gasan-zade S. Electronic phenomena in narrow-gap and gapless semiconductor alloys due to changes of the energy band structure
Українська версіяThesis for the degree of Doctor of Science (DSc)
State registration number
0504U000220
Applicant for
Specialization
- 01.04.10 - Фізика напівпровідників і діелектриків
23-04-2004
Specialized Academic Board
Д 26.199.02
V. Lashkaryov Institute of semiconductor physics
Essay
Files
Oblozka1.pdf
Oblozka2.pdf
Podiaki--267P.pdf
Poznahen--6-7P.pdf
Rozdil-1--21-59P.pdf
Rozdil-1--60-68P.pdf
Rozdil-2--108-117P.pdf
Rozdil-2--69-93P.pdf
Rozdil-2--94-107P.pdf
Rozdil-3--118-140P.pdf
Rozdil-3--141-151P.pdf
Rozdil-3--152-158P.pdf
Rozdil-3--159-174P.pdf
Rozdil-3--175-187P.pdf
Rozdil-4--188-211P.pdf
Rozdil-4--212-219P.pdf
Rozdil-4--220-241P.pdf
Rozdil-5--242-259P.pdf
Ssulki--268-302P.pdf
Titylnui--1P.pdf
Vusnovku--260-266P.pdf
Zmist--2-5P.pdf
Zstyp--8-20P.pdf
avtoref.pdf
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