Gomonnai A. High-energy irradiation-induced effects in phoshide and chalcogenide semiconductors

Object of investigation: High-energy irradiation induced phenomena and structural disorder effects in semiconductors and quantum-size effects in optical spectra of the nanocrystals. Aim of studies: Elucidation of main regularities of disorder effects upon the optical properties of phosphide and chalcogenide semiconductors, including nanocrstals, as well as studies of physical processes in these materials under high-energy electron irradiation. Methods of investigation: optical, X-ray, electron microscopy. Scientific novelty of results: The regularities of high-energy electron irradiation-nduced disordering in lattice dynamics, optical absorption and radiative recombination processes in GaP and CdS1-xSex are found. The new effects in the optical absorption processes in borosilicate matrix-embedded CdS1-xSex nanocrystals due to external effects are revealed. The regularities and specific features of phonon spectra of chalcogenide-based semiconductor nanocrystals (CdS1-xSex, Sn2P2S6, SbSI) are found. Theeffects of electron irradiation and size factor on the ferroelectric phase transition in Sn2P2S6-type crystals are elucidated. Implementation: planned. Sphere of application: optical and semiconductor engineering, nanoelectronics.