Vlaskina S. Single crystalline silicon carbide films on alien substrates, their structural and electro-optical properties

Thesis for doctor of science degree in physics and mathematics in speciality 01.04.10 - physics of semiconductors and dielectrics. - V. Lashkaryov Institute of Semiconductors Physics of Ukrainian National Academy of Science, Kyiv, 2004. The technological aspects of the deposition silicon carbide films on silicon, metal, dielectric and polymeric substrates were considered. Various technologies such as chemical vapor deposition (CVD), plasma enhanced CVD (PE CVD), laser deposition, reactive cathode deposition, magnetron sputtering and sublimation in vacuum method were demonstrated. Advantages of this or that technology for different optoelectronic's problems were considered on the basis of complex research of structural, electrical and optical properties. Low temperature technology of photosensitive nanocrystalline and microcrystalline films was developed. Single crystaline film's growth laws for high temperature materials with large lattice parameters mismatch were established. Phase transformation in single crystaline SiC films were investigated. Intrinsic and doping defects formation's laws were obtained. The nature of luminescence in light-emitting structures and different color's LED's (from blue 430 nanometers up to green 540 nanometers) were considered. Key words: optoelectronics, silicon carbide, thin films.