Kudin A. Physical features and defects of structure in binary phosphides А2В52 and А3В5

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0504U000645

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-11-2004

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

This Thesis is about physical process in binary phosphides А2В52 and А3В5 for irradiation with high-energy particles and devises methods of control crystal's structure and their characteristics. For each compound integrated approach was applied. It includes: engineering technology of obtaining crystals with specified characteristics (structure, form, polarity of conductivity, doping level etc.); research of structure (radiographic, goniometric, mass-spectrometric, computer visualization, method EPR-probe, positron annihilation); study of physical characteristics (micro-mechanical, electrical, optical, fluorescentical etc.) Basic on obtained results was devised a method of making new devices and improvement characteristics of being structure. In Thesis processing control methods features structure of crystals А2В52 (modification, super lattice, habitues, twinning etc.) was proposed; conception of structure main biographic and radiation-induced defect of crystals А2В52 was devised; mechanisms of thermaland radiation modification structure of lattice and defects in binary phosphides was studied; determinate role of nitrogen and oxygen in radiation proceeding of lattice damage. Application of complex processing gives possibility to devise methods of: making sensors, heterostructures and other devices on basis of crystals А2В52; improvement of quantum yield of LED on basic of gallium phosphide

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