Shwarts Y. Physical bases of semiconductor devices for extreme electronics.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0504U000692

Thesis Registration Form

0504U000692.pdf

Applicant for

Shwarts Yuriy Mikhailovich

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

24-12-2004

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

In this thesis the results of investigations of the basic regularities and peculiarities of changes in structural, electrophysical, thermo-, magnito- and tensoresistive properties of heavily doped and heavily compensated geteroepitaxial films Ge are presented. Transformation of energy structure of these films under influence of Ge-GaAs interface and internal mechanical strain under influence of temperature, deformation and magnetic field were taken into account. The correlation between electrophysical, thermophysical properties and design-technological parameters and thermometric characteristics are established for heavily doped p-n-structure of Si with taking into account the change of dominant mechanisms of current flow under influence of temperature, electrical field and irradiation. New types of microelectronic devices for extreme electronics are substantiated and realized.

Official opponents

Лисенко Володимир Сергійович
Третяк Олег Васильович
Литовченко Петро Григорович

Files

REFERAT--aref_shwarts1.doc

REFERAT--aref_shwarts2.doc

Дисертація_Шварц--Gl_1.doc

Дисертація_Шварц--Gl_2.doc

Дисертація_Шварц--Gl_3.doc

Дисертація_Шварц--Gl_4.doc

Дисертація_Шварц--Gl_5.doc

Дисертація_Шварц--Gl_6.doc

Дисертація_Шварц--Gl_7.doc

Дисертація_Шварц--ВЫВОДЫ.doc

Дисертація_Шварц--Литература.doc

Дисертація_Шварц--Тit+Sod+VVED.doc

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