Shevchenko V. Pulse - periodic sources of a high-power radiation for submicron range of spectrum

The object of investigation is a noise both of field-effect-transistors, including HEMT, and FET/HEMT-based amplifiers. The purpose is definition of limit noise parameters of microwave transistors and methods of their optimum application. The methods are CAD, reflectometry, Q-metry, noise measurements by Y-method. The results and novelty: a new mechanism (latent mismatch) for noise increase has been identified, the record value (about 10 K) of noise temperature of L-band amplifier has been achieved without criogenic cooling. A field of uses is high-sensitive receivers for radio astronomy, communication and radar systems. The object is a sources of a high-power radiation of a submicron range. The aims is the development of the pulse - periodic sources of a high-power radiation for submicron range of spectrum. The methods are: the theoretical analysis with use of geometric optics, speed equations, and computer modeling; and both the standard and new experimental methods and instrumentation for a measurement of characteristic such as electrical, light, spectral, power and angular; and a statistical analysis of experimental results. The new approach lies in regularities of forming of evolution both space and spectral characteristic of a radiation of dye lasers. The results are the effective sources of submicron range of spectrum.A field of uses is spectroscopy, remote sounding, medicine, biology.