Stakhira P. Physical and technological fundamental of microelectronic sensors based on heterostructures of organic and inorganic semiconductors

The thesis is devoted to elaboration of new physical and technological approaches for development of microelectronic devices. Object of investigation - electrophysical, photovoltaic, polarized and photochemical effcts. Subject of investigation - technological bases for creation of heterostructures, micro- and nanocomposites by formation of interface layers on the surface of layerwd semiconductors of single crystal А3B6 (InSe, GaSe), monocrystal and porous silicon, semiconductor indium and stibium oxide by the electroconductive polymer modification method, nitride and oxide films and laser intercallation. Physical and technological fundamental for formation of heterostructures based on p-InSe - polyphenil-acetylene, p-InSe - polyaniline and composite based on microdispersed InSe in conjugated polymer are designed, electrical and photoelectrical properties of such heterostructures are investigated. It is shown that current-voltage characteristic is described by Shottky equation with ideality coefficientclose to 2. The dependence of idling voltage and short circuit current on light irradiation intensity possesses non-linear behavior, cell spectral sensitivity is conditioned mainly by photosensitivity of inorganic semiconductor. Electrochromic effect in structure of In2O3 - liquid crystal - polyaniline - In2O3 is discovered. Simultaneous utilization of electrochromic effect in polyaniline film and electro-optic effects in liquid crystals is applied for realization of multistage control of optical elements. The change of kinetic parameters of laser-intercalated layered crystals and appearance of electronic and photoelectretic effects are discovered and validated on the basis of designed technology for Ni implantation into GaSe layered single crystal.