Khivrych V. Effects of compensation in semiconductors and irradiation sensors, made on it base.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0506U000158

Thesis Registration Form

0506U000158.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-02-2006

Specialized Academic Board

Д 41.051.01

Odessa I.I.Mechnikov National University

Essay

The thesis is devoted to the study and practical use of regularities of compensation influence (caused by stoichiometry or irradiation) on electrical, optical and spectrometric characteristics of binary and atomic semiconductors and devices, made on it base. While study of CdTe monocrystal, highly doped and compensated by initial defects, all theory forecasts were observed. It was shown the possibility to use such crystals as the model of amorphous semiconductor. Irradiation by gamma-rays of Co60 may discompensate crystals and made them useful for nuclear irradiation spectrometers. As it was shown, low dose gamma-irradiation of CdS, ZnSe, ZnSe<Te> leads to improving of their electrophisical characteristics, and complete relaxation of mechanical tension occurs in irradiated test Si0.75Ge0.25/Si structures. Improving of parameters of Si wafers and diode structures was also observed after irradiation by low fluencies of fast neutrons. Higher radiation hardness appeared in neutron transmutation doped silicon, which is caused by radiation origin drains. While study of near edge absorption in Si, technological dosimeter of fast neutrons for fluences more than ?1015 n/cm2 was proposed. Electroconductivity compensation in high purity n-type Si has become the base of accident neutron dosimeter design, and improved MOS-transistor was used as accident gamma-dosimeters.

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1_Rozdil.doc

2.1_Rozdil.doc

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5.1_Rozdil.DOC

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6_Rozdil.doc

Appendix.doc

Avtoreferat--Avtoreferat.doc

Avtoreferat--Cover.doc

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Avtoreferat--Table.doc

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Conclusion.doc

Cover.doc

Introduction.doc

Literat_1_3.doc

Literat_4_6.doc

Table_3.1.DOC

Table_3.2.doc

Table_3.6.doc

Zmist.doc

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