Izhnin I. Modification of properties of CdxHg1-xTe narrow gap solid solutions under ion milling.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0507U000291

Thesis Registration Form

0507U000291.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-04-2007

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

In the thesis, there are presented the results of the studies of the effect of ion milling with low-energy Ar+ ions on the properties of narrow-gap p-CdxHg1-xTe single crystals, epitaxial layers and heterostructures with wide band gap protective layers. The diffusion mechanism of the formation of the source of mercury diffusion and the diffusion character of propagation of the front of conductivity type conversion are proposed and justified. The nature of the dependence of the conversion depth on solid solution composition, sample temperature and the properties of the wide band gap protective layer is considered. The mechanisms of the conductivity type conversion in р-CdxHg1-xTe doped with As, Sb, Cu, Ag, and Au acceptor dopants are proposed and justified. The mechanisms of relaxation of electrical properties of the converted layers are elucidated and the temperature stability of the layers is studied.

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Files

Aref_NTI.doc

DS_sum.doc

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