Slyotov M. Luminescence mechanisms in diffusion layers of widegap II-VI semiconductors.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0507U000468

Thesis Registration Form

0507U000468.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-06-2007

Specialized Academic Board

Д 76.051.01

Essay

The diffusion layers with hole conductivity and stable in time cubic and hexagonal modification has been produced. Effective and temperature stable luminescence in wide spectral range was obtained. It defined by interband, dominant exciton and with participation of simple centers and their donor-acceptors pairs also at their recombination radiation. Based on the heterojunction a laboratory samples of optical radiation sensors and photoluminescence modulator has been produced.

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Files

Diser.doc

aref.doc

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