Katerynchuk V. Physical phenomena in heterojunctions based on layered crystals of gallium, indium, and tin chalcogenides

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0508U000525

Thesis Registration Form

0508U000525.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-09-2008

Specialized Academic Board

Д76.051.01

Essay

The results are presented for investigations of heterojunctions (HJ) with the lattice mismatches on the basis of GaSe, InSe e.a. layered crystals. It is shown that HJs have the high diode properties and their photoelectrical parameters can be changed and improved due to the use of the nanostructurized film-HJ tandem systems, tunnel insulators on the interface, degenerate oxides in pair with semiconductor, different crystallographic localization of the p-n-junction, and high-energy irradiation.

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Files

Dis_Katerynchuk.doc

aref.doc

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