Storozhenko I. Millimetric waves generation by graded gap structures of semiconductors A3B5 with intervalley electrons transfer

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0509U000172

Thesis Registration Form

0509U000172.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

13-03-2009

Specialized Academic Board

Д 64.051.02

V.N. Karazin Kharkiv National University

Essay

The object of research is process generation of electromagnetic waves of millimeter and submillimeter rang by means of transfer electrons devices. The purpose of research is development of transfer electrons devices theory in case of heterogeneous semiconductos. The methods of research are solution Boltzmann kinetic equation, the Tihonov and Samarsky integro-interpolation method, Fourier transformation, system concept and formalization. New results are theory of intervalley electrons transfer effects in graded gap semiconductors and graded gap semiconductor devices, new effects in graded gap semiconductors, new methods increasing of frequency of operation of transfer electrons devices

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Files

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