Kulinich O. Defects formation of in layered structures silicon dioxide-silicon and metal-silicon.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0510U000474

Thesis Registration Form

0510U000474.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

21-05-2010

Specialized Academic Board

Д 41.051.01

Odessa I.I.Mechnikov National University

Essay

Dissertational work is devoted to an establishment of laws of processes defect foundation in layered structures silicon dioxide-silicon and metal-silicon and instrument systems on their basis, to an establishment of mechanisms of influence of defects on electrophysical characteristics, to modelling of processes current flow in these structures and systems.By means of theoretical and experimental methods researches researches properties are establishedand the topological model of real structure transitive is offered to area in silicon layered structures silicon dioxide-silicon which is based on research of the mechanism of occurrence of plastic deformation on border of section, as bring to formation defects in transitive area of silicon.

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Files

aref.doc

aref.doc

Раздел 2.pdf

Раздел 3.pdf

Раздел 4.pdf

Раздел 5.pdf

Содержание.pdf

ТИТУЛ.pdf

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