Tovstyuk N. Microscopic theory of electron properties of layer semiconductors and intercalated structures.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0510U000786

Thesis Registration Form

0510U000786.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

20-10-2010

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

On the base of the studies of density of electron states of intercalante and lattice within the framework of the proposed in the dissertation one-impurity model and virtual crystal model, the interpretation of optical and thermodynamic properties of intercalated layer crystal is represented. Oscillating alternative character of the screened Coulomb potential as a function of the distance in the layer crystals with narrow band and nonparabollic dispersion law is found. Model description of the thermodynamicsof the creation of 1) oxited layers on the surface of GaSe crystal is presented; 2) conditions under which the structural transition in the In-Se system occurs are found.

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Files

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