Galiy P. Electronic properties, micro- and nanostructure of caesium halides and indium selenides surfaces.

The dissertation is devoted to investigation of electronic properties and peculiarities of micro- and nanostructures of caesium halides and indium selenides surfaces. The new results are given that reveal interconnection between the real surface structure of caesium halides and indium selenides (defects, micro- and nanostructure) and their electronic properties. They also reveal peculiarities of radiative defects and phase creation kinetics on the surface of caesium halides under irradiation and also relaxation electronic processes; structural and electronic surface features and the nature of electronic localized states, anisotropy of band structure and electronic spectra of In4Se3 crystal surfaces, establish peculiarities of surface structural.The experimental and theoretical studies of exoelectron emission (EE) phenomenon from irradiated caesium halides surfaces have been conducted. It is established, that this pheno-menon occurs due to the electronic relaxations of radiative defects in anion sublattice, also its recombination model has been proposed and grounded, and the performance of these crystals as materials suitable for exoemission skin-dosimetry was evaluated.The main stages of exoelectron emission phenomenon have been studied both experimental and theoretically, particularly, the creation of exoemission active centres (EAC), exoelectron originating, its movement towards the surface with scattering on defects and phonons, overco-ming of the surface barrier with further emission into vacuum. The studies of electron exoemis-sion, the processes of its generation, scattering, together with the quantitative theoretical descri-ption of phenomena are vital and develop the methodology of the novel method electron emis-sion spectroscopy, namely, exoelectron emission spectroscopy (EES). The studies show on high performance while usage the EES in spectroscopy of surface defects and impurities, and its application for observation and investigation of insulator surface defects is grounded.