Olikh Y. Acoustic-stimulated phenomenon in semiconductor real crystals (А2В6, А3В5, Ge, Si)

The thesis is devoted to the study of acoustic-stimulated (AS) changes of acoustic, electro-physical and photoelectrical properties of semiconductor crystals (А2В6 and А3В5 compounds; Si and Ge crystals, ZnS:Mn, GaP light-emitting and diode structures) treated by ultrasound. In CdXHg1-XTe (х=0.17-0.23) new dynamic AS effects have been discovered: acoustic conductivity and inversion of the conductivity type, acoustic polarization, ultrasound waves' dispersion and acoustic emission. Also the possibility to improve of the material physical properties and its stabilities has been stated. New methods of defect studies have been proposed, namely dynamical acoustic-Hall effect, thermal-acoustic annealing, and pulse acoustic conductivity. Mechanisms of the AS restoring of the characteristics of radiation damaged semiconductors devices have been studied. In irradiated Si and Ge samples "acoustic-active defects", characterized by the metastable states presence have been discovered and identified. AS transition among them is accompanied by the repeat-reverse changes of electro-physical characteristics. US treatment in the process of the ion doping in Si plates has been realized and some positive AS effects during technological operations of ion-implanted p-n-transitions' production have been discovered. Analysis of the defect creation in nonequilibrium conditions, caused by the simultaneous ion-implantation and intensive ultrasound has been made; a possibility of AS intensify of self-organization processes has been shown. Generalized systematics of AS phenomenon in semiconductors has been done.