Fedosov S. Properties of many-valleys semiconductors with structural defects of technological and radiation origin

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0513U000183

Thesis Registration Form

0513U000183.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

14-02-2013

Specialized Academic Board

Д 32.051.01

Essay

Established method of calculating the deformation potential constants and coefficients, which are determined by the degree of filling of deep level, and the estimated values for n-Ge and n-Si with deep energy levels. The effect of layered periodic inhomogeneities in the bulk single crystal of kinetic effects of cadmium and antimony gamma-irradiated with different doses of n-Ge and n-Si. The nature of the influence of gamma irradiation on the transport phenomena and laws of the rate of formation of radiation defects in CdSb n-and p-type conductivity is established.

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Files

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