Petrychuk M. Electrical noise in structures with the low-dimensional electron gas

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0515U000135

Thesis Registration Form

0515U000135.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

18-02-2015

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

The thesis is devoted to the experimental study of the nature of the noise phenomena in devices and materials with low-dimensional conductivity. Investigated the behavior of noise in submicron Si MOSFETs in inverse channel which has a noticeable quantization of electron energy, in AlGaN/GaN heterostructures with two-dimensional conduction channel, as well as carbon nanotubes and field effect transistor based on them. Found the cause of the excess noise component in the AlGaN/GaN heterostructure field effect structures with two-dimensional conduction channel. Established that low noise that accompanies the current through a single molecule placed between contacts mechanically controlled break junction induced by fluctuations configuration is the fundamental characteristic of the system.

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Files

aref.pdf

dis.pdf

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