Shevchenko I. Methods, models and information technologies for monitoring and optimizing the semiconductors single-crystal growth

An actual scientific and applied problem of theory development for production efficiency and product quality improvement with methods, models and information technologies for monitoring and optimizing the single-crystal growth has been formulated. The model of informational analytical system and method of application information technology design for diagnosing the condition of a complex technological process are suggested. The information technology for monitoring the temperature field during single-crystals growing, and information technology for optimizing the temperature conditions of ingot cooling-down have been developed. The fuzzy model of adverse situations recognition has been improved; the evaluation of situation criticality degree has been introduced. The knowledge base has been developed for the adverse situations diagnosis and recommendations on single-crystals growth conditions correction. The information technology has been developed to support operational decision-making during single-crystals growing. The information technology for single-crystals growth quality control has been developed too. The problems of proposed methods and models implementation are discussed; their reliability and efficiency are proved.