Sklyarchuk W. Electronic processes in contacts of metal with silicon carbide and compounds containing tellurium

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0517U000058

Thesis Registration Form

0517U000058.pdf

Applicant for

Sklyarchuk Waleriy Mykhaylovich

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

23-12-2016

Specialized Academic Board

Д76.051.01

Essay

The work is devoted to patterns and mechanisms of physical processes in the metal-semiconductor compounds based on SiC, CdTe, Cd (Zn) Te, Cd (Mn) Te, Cd (Hg) Te, Hg3In2Te6 in connection with the parameters of materials and structures.

Official opponents

Ільчук Григорій Архипович
Стрельчук Віктор Васильович
Пелещак Роман Михайлович

Files

Dis.doc

aref.doc

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