Khrypko S. Modification of system silicon - porous silicon - nanosized films of oxides (SiO2, SnO2, ZnO) for devices of electronic technology.

The dissertation is devoted to development and improvement of technology for getting structures of systems silicon - porous silicon - nanosized films of oxides (SiO2, SnO2, ZnO) for devices of electronic equipment. The developed technology of formation of porous silicon layers by surface modification of electrochemical etching. Experimentally and theoretically investigated the causes and forms of creation of silicon nanocrystals in the process of their growth process and further heat treatments. Was found the influence of the morphology of porous silicon, features of electron and phonon excitations in nanostructures and their optical properties. Carried out modification of the structure of nanosized film of oxide SiO2 silicon (28Si+) by the method of implantation. Established of the regularities and clarified the mechanisms responsible for radiation of nanocrystal silicon at the different stages of their structural transformation during the time modifying of various technological parameters. Proposed a model which describes the dependence of the photoluminescence intensity from the dose of implantation and temperature of annealing on the principle of representations about homogeneous decomposition of the supersaturated solid solution taking into account coalescence of nanocrystals and dependencies of probability between zones radiative recombination in quantum dots of silicon. The developed technology of modifying the structure of nanosized films of oxide (SiO2, SnO2, ZnO) by doping antimony, aluminum and fluoride by the method of spray pyrolysis. The obtained values for the electrooptical parameters: surface resistance, resistivity, mobility of charge carriers, concentration of charge carriers, optical transmittance. Determined the value of the optical forbidden zone of film.