Rudenko T. Electrical properties of silicon-on-insulator nanotransistor structures and their electrical characterization

This work presents an experimental and theoretical study of the special electrical properties of silicon-on-insulator (SOI) structures and SOI-based nanoelectronic devices, the development of their physical models and methods for their electrical characterization. A number of new, physically based methods for the evaluation of the electrical parameters of SOI structures and SOI-based devices are developed. The distinguishing features of interface coupling in ultra-thin-body SOI MOS structures and their physical origin are studied, and the corresponding analytical model is developed. The carrier generation and recombination mechanisms in SOI structures obtained by different techniques (ZMR - zone-melting-recrystallization, SIMOX - separation by implanted oxygen, UNIBOND - wafer bonding and hydrogen implantation) are studied. The high temperature characteristics of thin-film SOI MOSFETs are investigated, and their analytical models are developed. The factors providing an improvement of high-temperature characteristics of SOI MOSFETs are determined. The effective carrier mobility and its special features in different types of advanced SOI MOSFETs' structures (ultra-thin-body SOI structures with high-k gate dielectrics, SOI FinFET structures, and junctionless nanowire SOI MOSFET structures) are experimentally studied, and the mechanisms responsible for these special features are analyzed. The obtained results can be used for modeling, electrical characterization and optimization of SOI-based micro- and nanoelectronic devices.