Malyk O. Transport phenomena in AIIBVI and AIIIBV semiconductors based on short-range scattering models of charge carriers

The thesis is devoted to the application of the short-range principle to the description of the charge carrier scattering on the crystal lattice defects. For the charge carrier scattering on the nonpolar optical and acoustic phonons, neutral defects and static strain potential the interaction radius of the short-range potential is limited by one unit cell. For the charge carrier scattering on the ionized impurity, polar optical and piezoelectric (piezoacoustic and piezooptic) phonons the interaction radius of the short-range potential was searched in the form of R=γ a0 (a0 – lattice constant, γ – the respective adjusting parameters). The method of a precise solution of the stationary Boltzmann equation was used for the calculation of the conductivity tensor components. The temperature dependence of the charge carriers mobility in CdxHg1-xTe (0≤x≤1), CdxHg1-xSe (0≤x≤0.547), ZnxCd1-xTe (0≤x≤1), ZnxHg1-xSe (0.02≤x≤1), ZnxHg1-xTe (x=0.15), ZnO, GaN, CdS, InN, InSb crystals was calculated. The influence of the different scattering mechanisms on the charge carrier mobility is considered. A good agreement between theory and experiment in all investigated temperature range is established. The scattering parameters γ for different scattering modes are determined.