Goriachko A. Spontaneous nanostructuring of metallic and semiconductor surfaces investigated be means of scanning tunneling microscopy.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0519U001934

Applicant for

Specialization

  • 01.04.04 - Фізична електроніка

19-12-2019

Specialized Academic Board

Д 26.159.01

Institute of physics of NAS of Ukraine

Essay

In this dissertation a phenomenon of spontaneous surface nanostructuring (at elevated temperatures in ultra-high vacuum) is investigated by means of physical electronics techniques (scanning tunneling microscopy, electron spectro-microscopy, low energy electron diffraction). The following metal and semiconductor surfaces are considered: Si(001), Ge(111), SiC(0001), Ru(0001), as well as their interaction with the following adsorbates: Bi, Cu, Au, Pd, C or 2D-materials: С(0001), BN(0001), (BN)xCy or molecules arriving from the gas phase: O2, C2H2, HCl. A new fine positioning system for scanning probe microscopy named “cross-wound scanner” was designed, built and successfully tested. A new universal formula for the I(V) chracteristics in STM was derived, which takes into account both elastic and inelastic transport channels. A spontaneously nanostructured and simultaneously reconstructed Si(001)-с(8×8) superstructure was experimentally obtained. New elements of spontaneous nanostructuring were found on the reconstructed Ge(111) surface: 1D chains of interdomain defects within the с(2×8) reconstruction and 0D group vacancies of rest-atoms and ad-atoms. The growth mode of Bi on Ge(111) was experimentally identified at atomic level as Volmer-Weber type at initial stages going through 2D and 3D spontaneously nanostructured states with further deviation from any standard growth mode in the form of film’s surface smoothening. A semiconducting character of the 2D nano-islands and a metallic character of the continuous first monolayer of Bi on Ge(111) was established. An atomically clean interface between graphene and Ge(111) was realized experimentally, showing spontaneous nanostructuring in the form of 5,5√3×5,5√3-R30° superstructure with inherent dynamic changes of the crystalline and electronic structure at 300 К in real time. Repeated cycles of spontaneous nanostructuring were experimentally demonstrated for graphene/SiC(0001) interface in forward and reverse directions including stages with nanoperforated graphene, continuos buckled single layer graphene and multilayer graphene. Spontaneously nanostructured 2D monolayer of BN was obtained experimentally on Ru(0001) and a detailed atomic model of the 12×12 superstructure was created. The nanotemplate functionality of the given system was experimentally demonstrated by forming Au and Pd nanoclusters, as well as 2D Au nano-islands. Spontaneously nanostructured 2D-(BN)xCy mixtures of various stechiometry and lateral scale of mixing were experimentally obtained on Ru(0001), their detailed atomic models were developed and confirmed by theoretical ab-initio calculations of the (BN)xCy/Ru(0001) system. The Au/graphene/Ru(0001) system was experimentally realized with a hetereogeneous surface at the nanoscale, while a new nanoscale surface reconstruction of Au(111) was found in the Au/Ru(0001) system. The burning of a 2D BN in oxygen at elevated temperatures was investigated experimentally both at micro- and mesoscopic scales including visualization in real time. A protecting effect of the presence of Au nanoclusters on the BN/Ru(0001) was discovered. A cycle of oxidation and reduction was experimentally realized on Ru(0001) both in forward and reverse directions. It was characterized by the following surface morphology: atomically flat Ru(0001),

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