Solovan M. Electronic phenomena in planar and nanostructured surface-barrier structures based on silicon, silicon-containing and chalcogenide compounds.

The dissertation is devoted to research of optimum conditions of manufacturing of planar and nanostructured heterojunctions and Schottky diodes with the set and reproducible electric and photoelectric properties; establishment of regularities of physical processes in the created photosensitive structures depending on features of a design and technological processes. In the dissertation work for the first time it is made and investigated on the basis of silicon, on the surface of which nanowires, photosensitive nanostructured heterostructures MoOx/n-Si, MoN/n-Si, TiN/p-Si, Schottky diodes Ni/n-Si and Mo/n-Si, and on the basis of low-resistance CdTe heterojunctions MoOx/n-CdTe (CdZnTe), as well as a number of ultraviolet radiation detectors based on SiC and X / γ-radiation detectors based on high-resistance CdTe. A model is proposed that explains the growth of sequential resistance and the change in the concentration of doping impurity in the base region of silicon with intercalated silver nanoparticles, and also offers methods for determining the active area of ​​nanostructured barrier structures and the concentration of uncompensated impurity in semi-insulating CdTe.