Korol' A. Resonant tunneling with the participation of deep centers in the semiconductor structures and effects assoociated with it

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000133

Thesis Registration Form

0599U000133.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-04-1999

Specialized Academic Board

Д26.001.31

Essay

The role of deep impurity centers as well as of the resonant tunneling via deep states in the physical processes in the modern semiconductor structures is investigated in the thesis. The aim is to show that, due to deep impurities, one can constructively and in wide range control the caracteristics of the objects mentioned. Both tunneling and energetical spectra of such semiconductor structures as the disordered, quasiperiodical, alternated superlattices, two and threebarriers resonant tunneling structures, mesocrystals, quantum waveguides etc. have been evaluated and analysed with the help of Green function and transfer matrix methods.

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