Lisovs'kyj I. Structural Transformations in Surface Layers of the Silicon and Silicon-Oxygen Phase

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000274

Thesis Registration Form

0599U000274.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

02-07-1999

Specialized Academic Board

Д26.199.02

Essay

Regions of vitreous silicon-oxygen phase in silicon-based planar systems. To establish the physical mechanisms of oxygen atoms structural arrangement. Experimental techniques were IR- and Auger spectroscopy, ellipsometry, photoinjection, SIMS, computer simulation of structure. Connection between silicon-oxygen phase properties and oxygen atoms structural arrangement was studied. The physical models of corresponding structural transformations were proposed. The field of application is microelectronics.

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