Vashpanov Y. Adsorption sensitivity of semiconductor thin films of А2В6 group, oxides of heavy metals and porous silicon with a real surface with a cluster structure.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000371

Thesis Registration Form

0599U000371.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

10-09-1999

Specialized Academic Board

Д41.051.01.

Essay

The results of investigations of adsorption sensitivity of semiconductor materials of A2B6 group, oxides of heavy metals and porous silicon are presented. In dissertation high adsorption sensitivity have the doped samples which contain on the surface a clusters structure, obtained by surface doping or ion implantation of heavy metal atoms and specially processed surface of crystalline silicon. The physical models of adsorption sensitivity of semiconductor thin films is created. On the basis of this models a search of technology of gas sensors manufacturing was conducted.

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