Tulupenko V. Inverted states of current carriers in semiconductors on middle (l > 10...50 mm) and far infrared (l > 50...200 mm) spectrum

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000573

Thesis Registration Form

0599U000573.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

22-11-1999

Specialized Academic Board

D26.001.31

Essay

The advantages of Voight geometry of fields over Faraday one for laser, based on intersubband hole transitions in germanium in crossed electric and magnetic fields are shown. The same of crossed directions of uniaxial pressure and electric field over coincided directions of ones - for intracentre inversion of holes in germanium. The proposition on creating laser based on inter-sublevel transitions of charge carriers in vertically coupled quantum dot systems has been advanced (with coworkers) and grounded theoretically and experimentally

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