Zalevskyi D. Properties of materials for resistive random-access memory

The dissertation is dedicated to the study of materials for the active layer of resistive random-access memory (RRAM) cells, conducted using density functional theory and pseudopotential methods. RRAM offers the advantage of random access to individual cells, but large-scale integration requires solving several technological challenges. The investigated materials include: • SiₓGe₁₋ₓ with dislocations filled with silver atoms: Transformation of such films significantly alters their electronic properties, enabling switching between “set” and “reset” states. The switching voltage is 0.2 eV. • HfOₓ with oxygen vacancies filled with silver atoms: The introduction of vacancies sharply reduces the film’s resistance. • ZnO with oxygen vacancy filaments: Increasing the vacancy density forms an internal electric field that enhances the conductive effect. • Sb₂GеₓTe₃₋ₓ (x=0,1,2): Adding Ge modifies the bandgap width, influencing conductive properties. Bandgap defect engineering (e.g., divacancies, nanowires) is the primary mechanism of switching. This work deepens the understanding of such processes, opening new opportunities for RRAM development.