Pankov Y. Piezoresistance of p-type silicon and germanium thin layers and microcrystals and sensors on their base

The dissertation is devoted to the complex theoretical and experimental study of the piezoresistance of p-type Si and Ge for the development of piezoresistive sensors. The classification of strain effects in diamond-type semiconductors is developed. The investigation of piezoresistance in p-type Si and Ge micro-crystals in the wide strain range -1.2 %...+1 % is carried out; the constants of piezo- and elastoresistance and their deformation dependencies are calculated. It is established that the heavy and light holes in strained Si and Ge are characterized by the set of effective masses, which depended from the energy and strain. The correlation between piezoresistance and structure of Si and Ge thin layers is determined. The significant improvement of sensor's performance is achieved due to laser recrystallized.