Danchyshyn I. Development of the methods and means of microelectronic device's MOS- structures manufacturability assurance in condition of automated production

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U001656

Thesis Registration Form

0400U001656.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

01-06-2000

Specialized Academic Board

К 76.051.06

Essay

Object of investigation-microekectronic devices based on MOS-struc- tures. Aim of investigation - development of constructive-technological variant synthesis technique by the dint of taking account of its element's defectivity and crucial volume for assured yield. Methods - methods of math. and physical modelling, experimental investigations. Innovation-new approach to physical-technological modeling of microelectronic devices on MOS-struc- tures is developed. Level of implementation - new methods and means are implemented into manufacturing. Application-electronics industry.

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