Dobrovol's'kij Y. Development of silicon photo diodes of increased reliability

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U001704

Thesis Registration Form

0400U001704.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

01-06-2000

Specialized Academic Board

К 76.051.06

Essay

3. Object of investigation-Photo diodes on the basis of silicon. Aim of investigation -The analy- sis of factors influenc. on dark current p-i-n photo diodes from high-resist. silic. and radiat. stabil. photodiodes from silicon epitaxial of struct., and developm. of silic. photodiodes of raised reliability. Methods- methods of phys. modelling, experimental investigations. Innovation-the new approach to designing silicon p-i-n of photodiodes and radiat. stabil. photodiods of raised reliability is developed. Level ofimplementation-new de- signs are introduced into manufacture.

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