Maksymova T. Modification of structural characteristics of Si (001) surface in microelectronic technology

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002934

Thesis Registration Form

0400U002934.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

26-10-2000

Specialized Academic Board

Д 41.052.06

Essay

The processes of the temperature surface formation and low-energy radiation effects in Si (001) surface layers were investigated by computer simulation method. The method of molecular dynamics with empirical potentials was used. The microstructure of relaxed Si surface layers was studied. It was established the formation a quasi disordered phase with different structural peculiarities at high temperatures in comparison with volume structure. The main features in this phase are abnormal atomic polygons, dangling bonds and an arising of dimers in four surface layers. The subthreshold radiation in order to surface defect layers recover was explored

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