Mamykin S. Internal photoeffect in metal/semiconductor junction with microrelief interface

Photosensitive surface barrier structures of Schottky diode type with microrelief interface on the basis of GaAs and InP semiconductors. To research their optical, photoelectrical and electrophysical properties. Methods: spectral and angular dependencies of photocurrent, current-voltage and capacitance-voltage characteristics, transmittance/reflectance measurements of polarized light, atomic force microscopy, multiangle of incidence ellipsometry. Influence of electrostatic and electrodynamic field enhancement and electro-absorption effect (Franz-Keldysh effect) on the electrophysical and photoelectrical characteristics of Schottky diodes has been investigated. Special attention has been made for the investigations of the microrelief corrugation and sulfur passivation influences on the recombination properties of such structures and the degradation processes in them. New method for polaritonic photodetector characterization using surface polaritonic resonance has been proposed. High sensitive sensor fo r detection of liquid medium components has been made on the basis of the excitation of surface plasmon polaritons on the structures with diffraction gratings.