Syeliverstova S. Influence of growing technology on micromechanical properties of epitaxial structures based on GaAs 5742

Homo- and heteroepitaxial structures based on GaAs, grown by liquid phase and vapor phase epitaxy. Determination of the connection between micromechanic properties of epitaxial structures and conditions of their obtaining. The investigations was carried out by the methods of dimpling and scratching using Vickers pyramid, microscopy, Hall effect. It was determined that microhardness of GaAs doped by Si changes at the change of compensation level. The method of investigation of deformed areas by etching in iodine vapor was proposed and developed. Using this method, it was revealed that direction of deformation distribution in Ge-GaAs changes on reaching a heteroboundary. The field of application is a production of semiconductor devices.