Rengevych O. Effect of (-radiation and microwave radiation on the GaAs SB-FET parameters.

It is shown that changes in the parameters of low-noise microwave SB-FETs exposed to Со60 (-irradiation are determined by mass transport processes in ohmic and barrier contacts. Due to the radiation-enhanced relaxation of intrinsic stresses in ohmic and barrier contacts, an improvement of the transistor parameters is observed in the 106(2(107 R irradiation dose range: the noise level drops, the I(V curve slope increases, and the distribution of parameter values over the wafer becomes more uniform. The investigations of the effect of microwave radiation on the SB-FETs have shown that changes in characteristics occur even at low durations of treatment. As a result of the microwave radiation action, the barrier height grows and ideality factor decreases. It has been