Gerasym V. The development of switching p-channel MOS-structures guided by low-power signal

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0401U002494

Thesis Registration Form

0401U002494.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

27-06-2001

Specialized Academic Board

К76.051.06

Essay

The construction of the vertical MOS-transistor with the p-channel permitting to receive a high packing denseness of elements is developed. The technological methods of production of switching р-channel MOS-structures with double diffusion are optimized. For decrease of defects and for increase of stability of their electrophysical parameters the methods of hetering are used and inclusion to optimum routing of MOS-transistor structures forming.

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