Strebezhev V. Photosensitive Elements and Thin Film Interference Filters on the Base of CdSb and In4Se3

The dissertation is devoted to making and investigation of the properties of photosensitive elements on the base of doped thin films and layers of CdSb and In4Se3 and also interference thin film multi-layer optical IR-filters on the substrates of these materials. The method of obtaining of stechiometric CdSb films by deposition from designed capillary evaporator was developed. The distribution of film thickness for the capillary pipe source was investigates. The structure, composition and electro-physical properties of obtained CdSb thin films were studied. Homoepitaxial layers of CdSb, In4Se3 and CdxZn1-xSb-CdSb, In4Se3-In4Te3 heterostructures were grown by liquid epitaxy. The conditions of growth control and doping of CdSb layers when diffusive mechanism dominates in mass transport in solution-melt were determined. The structure and photoelectrical properties of obtained p-n homo- and heterojunctions have been studied. Calculations and optimization of thin film multi-layer interference filters for deposition on CdSb and In4Se3 were carried out. Single and two-channel interference-absorptive filters on these materials were obtained and their optical characteristics and mechanical stability in temperature range 77-373K were studied.