Feyer V. Excitation of Si, Ge and Mg electron states by slow electrons

Object of investigation: different-modification surfaces of monocrystalline p-Si(100), faces (111), (100), (110) of monocrystalline Ge, fresh deposited and oxidated Mg layers. Aim of studies: elucidation of regularities of elastic and inelastic slow monoenergetic electron scattering by p-Si(100), Ge(111), Ge(100), Ge(110) and Mg surfaces. Method of investigation: low-energy electron spectroscopy. Scientific novelty of results. It has been found that the peculiarities in the energy-loss spectra and energy dependences of elastic scattering intensities below 5 eV are due to the excitation of electronic states of p-Si(100), Ge(111), Ge(100), Ge(110) and Mg. The influence of surface modification, crystalline orientation and chemical purity on the elastic and inelastic slow monoenergetic electron scattering processes has been shown. New surface electronic states have bee found for Ge surfaces under study with the ~0.18 and ~0.25 eV energies in the forbidden band. Implantation: planned. Sphere of application: microelectronic, nanoelectronic.