Chelyubeyev V. Influence of the contact heterogeneities оn the electric characteristics of Gunn diode

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U003850

Thesis Registration Form

0402U003850.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

16-12-2002

Specialized Academic Board

Д 26.002.08

Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute

Essay

The thesises deals with the determination of the influence of the edge effects and heterogeneities of the ohmic contacts on the base of АuGe to GaAs on the electric characteristics of Gunn diode. As it was defined, the "island" structure of AuGe ohmic contacts is determined by the crystall structure of the semiconductor. This was used to develop contacts with hightened current compactness to semiconductors of AIIIBV. The edge effects are displayed in the dependence of the tensity of the threshold electric field Eth to the area S of the mesa-structure of diod and when the diod is breached.

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Files

2-6-014-finish.doc

ЧЕЛЮБЕЕВ_disser.doc

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