Zuev S. Dynamic model of physical processes in the field transistors with the Shcottky gate submicron sizes

The thesis is devoted to the numeral research of physical processes of charge transfer in the semiconductor structures and in the field transistors with Shcottky gate by submicron sizes. The mathematical model which involves numerical solution of the Bolcman equation by the method of the large particles and equations of the Poisson and termoconductivity with corresponding border conditions is created. For more exact description of the processes in the under contact area the general model is complemented by the models of contact metal-semiconductor. The adequacy of the description of the processes, which occur in submicrons sizes devices, is showed. The cycle of numeral experiments devoted to researches of dynamic characteristics of GaAs and influences of different regime and constructive parameters on Shcottky transistor characteristics is carried out with the help of the created model.