Yurchenko G. The wide band gap layers of ZnO:Al, ITO and CdS in the film photoelectric active heterosystem

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001594

Thesis Registration Form

0403U001594.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

17-04-2003

Specialized Academic Board

К 55.051.02

Essay

The object is physical processes of technological decisions influence of wide band gap layers on efficiency of photoelectric active thin film multilayer heterosystems; the aim to work out the physical bases of material optimization of technology of wide band gap layers for thin film heterosystems; the methods are the physical and structural methods of investigations; the new approach lies in at the first time physical role and mechanisms of degradation of wide band gap layers ZnO:Al, ITO and CdS in multilayer heterosystems are offered; the results lead to increase of efficiency of thin film solar cells; the field is solar cells

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