Rybka О. Detectors on the basis of compound semiconductors CdTe and CdZnTe for dosimetry of an ionizing radiation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001801

Applicant for

Specialization

  • 01.04.21 - Радіаційна фізика і ядерна безпека

21-05-2003

Specialized Academic Board

Д 64.845.01

National Science Center "Kharkiv Institute of Physics and Technology"

Essay

The thesis is devoted to the determination of regularities in physical processes taking place in detectors of (-radiation made from compound semiconductors CdTe and CdZnTe, as well as to the creation of dosimetry detector units on the basis of these semiconductors. The proof was given for the choice of compound semiconductors CdTe and CdZnTe as material for effective detectors of an ionizing radiation. The complex research of detectors from CdTe and CdZnTe was conducted. The electro-physical, dosimetry, and radiation performances were investigated. Dosimetry characteristics of detectors were investigated both in count and current operational regimes in a wide range of exposition doze rate.

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