Danilets E. Position-sensitive photodetectors based on Si and epitaxial structures of GaAs (receiving, properties, application)

The object is phenomenon of appearance of photo-EMF witch is linearly depends on light spot coordinate on the surface of photoreceiver; the aim is development of technology of production of positional sensitive photoreceivers (PSP) with improved characteristics, using traditional semiconductor materials and semiconductor structures witch were never used for PSP production, investigation of their main characteristic and proposition of some areas of their usage; the methods are optical and electrical, mathematical modeling using computer; the new approach lies in original technology of production of the dividing groove for the PSP based on the transverse photoeffect, the production of PSP on structures GaAs:Si and superlattice GaAs, mathematical modeling of position characteristic of the two-coordinate PSP; the result is technology of production of PSP with improved characteristics, using traditional semiconductor materials and semiconductor structures witch were never used for PSP production; the fieldof developing is automatic systems of control